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Silicon Carbide - Reaction Bonded
*Click on a Property to see a comparison of up to 10 materials
Property* Value
General
Chemical FormulaSiC
Mechanical
Density3.1 - 3.2 gm/cc
Hardness2500-2550 Knoop
Tensile Strength44.5 kpsi
Modulus of Elasticity57 - 65 x 106 psi
Flexural Strength67 - 95 kpsi
Compressive Strength360 - 362 kpsi
Poisson's Ratio0.14 - 0.19
Fracture Toughness4 - 5 MPa m½
Electrical
Volume Resistivity1 x 104 ohm-cm2
Thermal
Coefficient of Thermal Expansion4.3 - 4.5 x 10-6/°C
Thermal Conductivity110 - 155 W/mK
Specific Heat0.67 cal/g °C
Maximum Working Temperature1650 °C
Shock Resistance400 °C Diff.
All properties are at room temperature unless otherwise noted.

Engineering data are representative, and are not intended as absolute nor warrantable. Manufacturer’s Data shown is blended from multiple sources and therefore illustrates the marketplace.

Silicon Carbide is among the hardest of ceramics, and retains hardness and strength at elevated temperatures, which translates into among the best wear resistance also.  Additionally, SiC has a high thermal conductivity, especially in the CVD (chemical vapor deposition) grade, which aids in thermal shock resistance.  It is also half the weight of steel.

Based on this combination of hardness, resistance to wear, heat and corrosion, SiC is often specified for seal faces and high performance pump parts.

Reaction Bonded SiC has the lowest cost production technique with a course grain. It provides somewhat lower hardness and use temperature, but higher thermal conductivity.

Direct Sintered SiC is better grade than Reaction Bonded and is commonly specified for high temperature work.

CVD SiC® is a face centered cubic, polycrystalline form produced by chemical vapor deposition. This material is extremely pure, and is specified for it's excellent thermal conductivity approaching 300 W/mK. It is considerably more expensive to produce than the sintered or reaction bonded grades. ® Rohm & Haas.


Wikipedia Reference for Silicon Carbide Reaction Bonded

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